Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and Its Improvement With Strong Antishort Circuit Fault Capabilities

The single gate driven series connected power device stack possesses the advantages of high compactness and low cost. However, research its short circuit (SC) characteristic remains uncovered. This article fills this gap points out that, with driver it has potential over-current limitation. Furthermore, based on it, an improved silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) strong antishort fault capabilities is proposed. By adding auxiliary circuits to adjust driving process driver, SiC xmlns:xlink="http://www.w3.org/1999/xlink">mosfet can be automatically turned xmlns:xlink="http://www.w3.org/1999/xlink">off in both SC conditions under load hard switch fault, while normal working principle not influenced. Neither active control nor overcurrent detection required, which biggest merit proposed topology. Its design analysis are presented detail, followed by validation conducting simulations experiments.